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SiC Rectifiers
Third-Generation Semiconductor Material
SiC Schottky Diode
SiC Schottky diodes (SiC SBD) have a small total charge (Qc), low switching losses and high-speed switching operation. Therefore, it is widely used in PFC circuits of power supplies. In addition, unlike silicon-based fast recovery diodes whose trr (reverse recovery time) increases with temperature, silicon carbide (SiC) components maintain constant characteristics, thereby improving circuit performance. Manufacturers can reduce the size of industrial control equipment and consumer sub-products, making them ideal for use in power factor correction circuits and inverters.
With an SiC Schottky barrier diode (SBD), switching losses are reduced by 2/3 compared to a silicon fast recovery diode (FRD).
Our SiC Schottky barrier diode (SBD) exhibits stronger IFSM and lower VF conduction losses compared to those of other vendors.
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| Part Number | VRRM(V) | IF(A) | Die | VF(typ)(V) | IR(typ)(uA) | Qc(nC) | Package |
|---|---|---|---|---|---|---|---|
| PCR10S650TD | 650 | 10 | 1 | 1.4 | 6 | 30 | TO-252 |
| PCR8S650TD | 650 | 8 | 1 | 1.39 | 6 | 23 | TO-252 |
| PCR6S650TD | 650 | 6 | 1 | 1.34 | 1.2 | 18 | TO-252 |
| PCR10S650TF | 650 | 10 | 1 | 1.4 | 6 | 30 | ITO-220AC |
| PCR8S650TF | 650 | 8 | 1 | 1.39 | 6 | 23 | ITO-220AC |
| PCR6S650TF | 650 | 6 | 1 | 1.34 | 1.2 | 18 | ITO-220AC |
| PCR10S650T | 650 | 10 | 1 | 1.4 | 6 | 30 | TO-220AC |
| PCR8S650T | 650 | 8 | 1 | 1.39 | 6 | 23 | TO-220AC |
| PCR6S650T | 650 | 6 | 1 | 1.34 | 1.2 | 18 | TO-220AC |