- sales.hk@pfc-device.com
- 852-2558-0181
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1/F., Shell Industrial Building, 12 Lee Chung Street, Chai Wan, Hong Kong.
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852-2558-0181
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sales.hk@pfc-device.com
New Product

SMAF-A
PFC new development patterns SMAF-A package product for mobile phone charger and power supply applications Network & Communction need to develo...
Shielded-Gate Trench (SGT) MOSFET
PFC’s shielded-gate trench (SGT) MOSFET with excellent figure of merit (FOM) quality provides efficient design solutions. The 100 V SGT series is offered in standard and logic-level parts.
PFC’s wafer technology enables SGT MOSFETs to generate low gate charge and RDS(ON) to minimize conduction losses and create excellent FOM to optimize various topology efficiency.
It enables significant reduction in trench critical dimensions (CD), thereby allowing for a smaller unit cell size (Pitch Size). By utilizing higher doping concentrations in the epitaxial layer, it achieves equivalent breakdown voltage, reducing device Rsp and enhancing market competitiveness.
